agilent HSCH-9301 gaas beam lead schottky ring quad diode data sheet description the HSCH-9301 ring quad uses advanced gallium arsenide schottky barrier diodes. these diodes are fabricated utilizing molecular beam epitaxy (mbe) manufacturing techniques. it features rugged construction and consistent electrical perfor- mance. a polyimide coating provides scratch protection and resistance to contamination. applications this schottky diode is optimized for use in mixer applications at millimeter wave frequencies. features gold tri-metal system for improved reliability low capacitance low series resistance high cutoff frequency polyimide passivation HSCH-9301 (junction side up) 390 (15.4) 310 (12.2) 9 (0.4) 7 (0.3) 756 (29.8) 746 (29.4) 125 (4.9) 105 (4.1) 183 (7.2) 178 (7.0) 125 (4.9) 105 (4.1) 183 (7.2) 178 (7.0) 712 (28.0) 702 (27.6) l = 0.1 nh dimensions in m (1/1000 inch) 346 (13.6) 266 (10.5) 60 (2.4) 50 (2.0)
2 maximum ratings power dissipation at t lead = 25 c........................... 75 mw per junction measured in an infinite heat sink derated linearly to zero at maximum rated temperature operating temperature .................................................... -65 c to +150 c storage temperature ........................................................ -65 c to +150 c mounting temperature ........................................... 235 c for 10 seconds minimum lead strength ................................................................. 6 grams HSCH-9301 electrical specifications at t a = 25 c symbol parameters and test conditions units min. typ. max. c m measured capacitance pf 0.075 0.100 v r = 0 v, f = 1 mhz c ta total adjacent capacitance pf 0.110 v r = 0 v, f = 1 mhz c td total diagonal capacitance pf 0.075 v r = 0 v, f = 1 mhz ? c m measured capacitance difference pf 0.015 0.025 v r = 0 v, f = 1 mhz r s series resistance w 6 v f forward voltage, i f = 1 ma mv 700 800 ? v f forward voltage difference, i f = 1 ma mv 20
3 spice parameters parameter units HSCH-9301 b v v5 c j0 pf 0.04 e g ev 1.43 i bv a10e-5 i s a 1.6 x 10e-13 n 1.20 r s ? 5 p b v 0.7 p t 2 m 0.5 typical parameters 100 10 1 0.1 0.01 forward voltage (v) forward current (ma) 0 0.2 0.4 0.6 1.2 1.0 0.8 +125 c +25 c -55 c figure 1. typical forward characteristics for HSCH-9301. dynamic and series resistance schottky diode resistance may be expressed as series resistance, r s , or as dynamic resistance, r d . these two terms are related by the equation r d = r s + r j where r j is the resistance of the junction. junction resistance of a diode with dc bias is quite accurately calculated by r j = 26/i b where i b is the bias current in milliamperes. the series resistance is independent of current. the dynamic resistance is more easily measured. if series resistance is specified it is usually obtained by subtracting the calculated junction resis- tance from the measured dynamic resistance. quad capacitance capacitance of schottky diode quads is measured using an hp4271 lcr meter. this instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. the conditions are: 20 mv r.m.s. voltage at 1 mhz. agilent defines this measurement as c m , and it is equivalent to the capacitance of the diode by itself. the equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below. in a quad, the diagonal capaci- tance is the capacitance between points a and b as shown in figure 2. the diagonal capacitance is calculated using the following formula c 1 x c 2 c 3 x c 4 c diagonal = CCCCCCC + CCCCCCC c 1 + c 2 c 3 + c 4 the equivalent capacitance is the capacitance between points a and c in figure 2. this capacitance is calculated using the following formula 1 c adjacent = c 1 + CCCCCCCCCC C 1 1 1 CC + CC + CC c 2 c 3 c 4 assembly techniques diodes are esd sensitive. esd preventive measures must be employed in all aspects of storage, handling, and assembly. diode esd precautions, handling considerations, and bonding methods are critical factors in successful diode performance and reliability. agilent application note #55, beam lead diode bonding and handling procedures provides basic information on these subjects. c 1 c 2 c 4 c 3 a b c figure 2.
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (408) 654-8675 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 271 2451 india, australia, new zealand: (+65) 271 2394 japan: (+81 3) 3335-8152(domestic/international), or 0120-61-1280(domestic only) korea: (+65) 271 2194 malaysia, singapore: (+65) 271 2054 taiwan: (+65) 271 2654 data subject to change. copyright ? 2002 agilent technologies, inc. obsoletes 5965-8852e january 31, 2002 5988-5515en
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